一类混合型Szàsz-Beta算子的强逆不等式(英文)

In this paper,a strong converse inequality of type B in terms of a new Kfunctional Kλα f,t2(0 < α < 2,0 ≤ λ ≤ 1) for certain mixed Szász-Beta operators is given.By this inequality,the converse theorem can be obtained for the operators.     

pH-Dependent Assembly of Two Novel Organic–inorganic Hybrids Based on Vanadoantimonate Clusters

Two novel organic–inorganic hybrid vanadoantimonate compounds, [Zn₂(dien)₃][{Zn(dien)}₂V₁₆Sb₄O₄₂(H₂O)]·4H₂O (1) and [Zn(dien)₂]₂ [{Zn(dien)}₂(V₁₄Sb₈O₄₂)₂(H₂O)]·4H₂O (2) (dien = Diethylenetriamine), have been synthesized hydrothermally at different pH value, and structurally characterized by elemental analyses, FT-IR, XPS, TGA and single crystal X-ray diffraction analysis. Compound 1 is composed of the rare [V₁₆Sb₄O₄₂]⁸⁻ cluster covalently linked by two [Zn(dien)]²⁺ coordination cations to yield a novel one-dimensional linear chain. Compound 2 exhibits a one-dimensional zigzag chain constructed from the [V₁₄Sb₈O₄₂]⁴⁻ cluster and [Zn(dien)]²⁺ coordination polymer. The two examples represent the first one-dimensional assemblies based on vanadoantimonate cluster and the metal–organic complex moieties.     

HNCX (X＝O,S)和F反应机理及电子密度拓扑分析

采用G3B3//B3LYP/6-311＋＋G(d,p)方法研究了HNCX (X＝O, S)与F原子的反应机理. 找到了六条可能的反应通道, 计算结果表明, 该反应的主产物为HF＋NCX (X＝O, S). 对反应过程进行了电子密度拓扑分析, 讨论了反应过程中化学键的断裂和生成规律, 找到了HNCX (X＝O, S)和F反应过程中的T型结构过渡态、三元环状结构过渡区和四元环状结构过渡区.     

Adaptive lag synchronization and parameter identification of fractional order chaotic systems

This paper proposes a simple scheme for the lag synchronization and the parameter identification of fractional order chaotic systems based on the new stability theory. The lag synchronization is achieved and the unknown parameters are identified by using the adaptive lag laws. Moreover, the scheme is analytical and is simple to implement in practice. The well-known fractional order chaotic Lü system is used to illustrate the validity of this theoretic method.     

3d-4f单分子磁体*

单分子磁体是指那些在磁场下能够被磁化,当磁场去除后仍能保持磁性的单个分子。由于在信息处理和储存方面具有潜在的广泛应用前景,单分子磁体日益成为化学、材料科学和物理等学科的研究热点。近年来,同时含有镧系金属离子和过渡金属离子的3d-4f单分子磁体更是引起了很多研究者的兴趣。本文阐述了3d-4f单分子磁体的优势,总结了3d-4f单分子磁体的常见合成方法及其磁性,分析了影响3d-4f单分子磁体磁性的因素。     

Spin Polarization and Andreev Conductance through a Diluted Magnetic Semiconductor Quantum Wire with Spin--Orbit Interaction

Spin-dependent Andreev reflection and spin polarization through a diluted magnetic semiconductor quantum wire coupled to normal metallic and superconductor electrodes are investigated using scattering theory. When the spin-orbit coupling is considered, more Andreev conductance steps appear at the same Fermi energy. Magnetic semiconductor quantum wire separates the spin-up and spin-down electrons. The Fermi energy, at which different- spin-state electrons begin to separate, becomes lower due to the effect of the spin-orbit interaction. The spin filter effect can be measured more easily by investigating the Andreev conductance than by investigating the normal conductance.     

Nonequilibrium Kondo effect and Andreev reflection through double quantum dots with spin-flip scattering

The Kondo effect and the Andreev reflection tunneling through a normal (ferromagnet)-double quantum dots-superconductor hybrid system is examined in the low temperature by using the nonequilibrium Green's function technique in combination with the slave-boson mean-field theory. The interplay of the Kondo physics and the Andreev bound state physics can be controlled by varying the interdot hopping strength. The Andreev differential conductance is mainly determined by the competition between Kondo states and Andreev states. The spin-polarization of the ferromagnetic electrode increases the zero-bias Kondo peak. The spin-flip scattering influences the Kondo effect and the Andreev reflection in a nontrivial way. For the ferromagnetic electrode with sufficiently large spin polarization, the negative Andreev differential conductance is found when the spin flip strength in the double quantum dots is sufficiently strong.     

Spin polarization in parallel double dots with spin-orbit interaction

Spin polarization in parallel double quantum dots embedded in arms of Aharonov-Bohm interferometer is investigated. The spin-orbit interaction exists in quantum dots. We find that the spin polarization is quite large even with a weak spin-orbit interaction. The direction and the strength of the spin polarization are well controllable and manipulatable by simply varying the strength of spin-orbit interaction or the energy levels in quantum dots. Moreover, electron-electron interaction strengthens the spin accumulation when the energy levels of the two quantum dots are identical. As the energy levels are unequal, electron-electron interaction cannot increase the spin accumulation. It is worth mentioning that the device is free of a magnetic field or a ferromagnetic material and it can be easily realized with present technology.